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Epitaxial growth of InP to bury directly bonded thin active layer on SiO2 /Si substrate for fabricating distributed feedback lasers on silicon - Fujii - 2015 - IET Optoelectronics - Wiley Online Library
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II-VI Incorporated Unveils 100 Gbps Indium Phosphide Directly Modulated Lasers for High-Speed Transceivers Deployed in Datacenters | Coherent Corp.
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Tunable Laser with an Indium phosphide (InP) active gain section that... | Download Scientific Diagram
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PDF] Integrated butt-coupled membrane laser for Indium Phosphide on Silicon platform | Semantic Scholar
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